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BC547 TO-92
ترانزیستور 2SC945 نوع ترانزیستور :NPN حداکثر Ic (آمپر) :0.1 حداکثر توان مصرفی ( وات ) :0.25 حداکثر ولتاژ VCEO به ( ولت ) :40 حداکثر VCBO به( ولت ) :50 حداقل Hfe :75 حداکثر VEBO به ( ولت ) :5 حداکثر دمای اتصال Tj به ( درجه سانتی گراد ) :125
S8050D TO-92
نوع ترانزیستور : NPN حداکثر Ic (آمپر) : 1.5 حداکثر توان مصرفی ( وات ) : 0.7 حداکثر ولتاژ VCEO به ( ولت ) : 30 حداکثر Hfe : 400 حداقل Hfe : 40 VCEsat : 0.5
BC807-40 SOT23
A BC807-40 SOT23 PNP Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنBC807-40 SOT23
C1815 TO-92
نوع: NPN بهره(hfe): 700 – 70 ولتاژ کلکتور-امیتر: 50V جریان کلکتور: 150mA فرمت پایه ها: TO-92
IRLML6402 SOT23
A IRLML6402 SOT23 MOSFET Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنIRLML6402 SOT23
MMBT5401 SOT23
A MMBT5401 SOT23 PNP Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنMMBT5401 SOT23
BTA06-600B TO-220
نوع نصب : DIP پکیج : TO-220 دمای کاری(سانتیگراد) : -40 ~ +125 Vdrm حداکثرولتاژ تکرار شونده در حالت خاموش (50 تا 60 هرتز) : 600 IT جریان RMS در حالت روشن (A) : 12 Igt جریان تحریک گیت (mA) : 25 Voltage – Off State(Voltage) : 600 Voltage – Gate Trigger (Vgt) (Max)(Volt) : …
ادامه خواندنBTA06-600B TO-220
2N7002K SOT23
A 2N7002K SOT23 MOSFET Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندن2N7002K SOT23
MMBT2907A SOT23
A MMBT2907A SOT23 PNP Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنMMBT2907A SOT23
BC639 TO-92
نوع ترانزیستور: BJT بهره(hfe): 25-250 تعداد پایه: 3 محدوده دمای کاری(C): -65 to +150 ولتاژ کلکتور-امیتر(V): 80 جریان کلکتور(A): 1 پلاریته ترانزیستور: NPN فرمت پایه ها: TO-92 PD @ Ta=25ᵒC: 1W پارت نامبر: BC639
4n65L TO252
Description The UTC 4N65L TO252 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to …
ادامه خواندن4n65L TO252
MMBT3906 SOT23
A MMBT3906A SOT23 PNP Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنMMBT3906 SOT23
MMBT2222A SOT23
A MMBT2222A SOT23 NPN Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنMMBT2222A SOT23
UT3400G SOT23
Description The UTC UT3400G SOT23 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400G is optimized for applications, such as a load switch or in PWM. Features RDS(ON) ≤ 28mΩ @ VGS=10V, ID=5.8A RDS(ON) ≤ 33mΩ …
ادامه خواندنUT3400G SOT23
TIP42CL TO252
Description The UTC TIP42CL TO252 is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. Features Complement to TIP41C Medium Power Linear Switching Applications
MMBT3904 SOT23
A MMBT3904 SOT23 NPN Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنMMBT3904 SOT23
BC817-40 SOT23
A BC817-40 SOT23 NPN Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنBC817-40 SOT23
LF247 SO14
These circuits are high speed J–FET input quad operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. Key Features Low power consumption Wide common-mode (up to VCC+) and differential voltage …
ادامه خواندنLF247 SO14
BC846B SOT23
A BC846B SOT23 NPN Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or currentapplied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a …
ادامه خواندنBC846B SOT23